6N60 DATASHEET PDF

6N60 datasheet, 6N60 circuit, 6N60 data sheet: UTC – Amps, / Volts N-CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for. DESCRIPTION. The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state. TO/I PAK. TO/D PAK. 6N Pin Assignment. Ordering Number. Power MOSFET. ▫ ORDERING INFORMATION. Package. 1.

Author: Vobar Zuktilar
Country: Colombia
Language: English (Spanish)
Genre: Marketing
Published (Last): 4 August 2005
Pages: 404
PDF File Size: 10.59 Mb
ePub File Size: 9.73 Mb
ISBN: 446-5-50100-458-8
Downloads: 6268
Price: Free* [*Free Regsitration Required]
Uploader: Samujas

The transistor can be used in various power sw 1.

Experimental work Dxtasheet for 6NN optocoupler 2: G E – very tight parame 1. G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy parallel switching capability due to pos 1. Connect Pin 8 with Vcc and Pin 5 with ground. Features 1 Fast reverse recovery time: Because i want to drive a mosfet.

No part of this website may be reproduced without author’s approval. By utilizing th 1.

6N60, 6N80, 6N90

The Low gate charge improved planar stripe cell dahasheet the improved guard ring Low Crss terminal have been especially tailored to minimize on-state 1. The transistor can be used in various 1.

  DATA ACQUISITION AND PROCESS CONTROL WITH THE M68HC11 MICROCONTROLLER PDF

You can see a comprehensive list of commercially available IC from this link. Low RDS on Technology. Features 1 Low drain-source on-resistance: Newer Post Older Post. The transistor can be used in various power 1. By utilizing this a 1. Electrically Isolated Back Surface?

Prof Umanand PV system Design. The transistor can be used in various pow 1. You cannot apply a voltage greater than that of its rated voltage.

Disclaimer This blog is about my PhD work and an archive to my engineering education. G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy parallel switching capability due to positive 1.

6.2 Amps,600/650 Volts N-channel Mosfet

Is it still possible to get 10V at the Vo pin, sir? For more information please see this video. Output is voltage across pin 6 and 5. Drain 3 2 Pin 3: E – very tight parameter distribution – high ruggedness, temperature stable behav 1.

Connect the input signal between pins 2 and 3. However, additional study material for the courses i teach and that i have studied is also archived here. In order to get 10V at the output there are two methods. All the circuits in this blog are tested by datasyeet under specific conditions. I used a 58 ohm resistor in series with pin 2. In that case you can choose a suitable resistance and can use the voltage across it.

  LEY AVELINO SINANI PDF

By utilizing t 1. Use a sutiable resistor for current limiting.

Applications These devices are suitable device for SM. You Might Also Like. Connect a load resistor between pin 8 and pin 6.

6N60 Datasheet PDF ( Pinout ) – V N-CHANNEL POWER MOSFET

PhD EE March 21, at 2: The transistor can be used in various po 1. G E – Variable Speed Drive for washing machines, air conditioners and inducti datsaheet. Switch mode powe 1. It is mainly suitable for electronic ballast and switching mode power supplies. No part of this blog may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without my prior written permission.

Ricky March 19, at 9: Ricky March 19, at I am using 6N and the datasheet said the supply voltage PhD EE March 19, at E – very tight parameter distribution – high ruggedness, temperature stabl 1.