IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.
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It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Repetitive rating; pulse width limited by maximum junction temperature see fig.
B, Mar This datasheet is subject to change without notice.
Case Temperature tr td off tf Fig. Drain Current Current regulator Same type as D. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.
Contour of slot optional. Dimension D and E do not include mold flash. Mold flash shall not exceed 0. These dimensions are measured at the outermost extremes of the plastic body. Thermal pad contour optional with dimensions D1 and E1.
IRFP NTE Equivalent NTE POWER MOSFET N-CHANN – Wholesale Electronics
Lead finish uncontrolled in L1. Xian and Mingxin actually photo.
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